Hostname: page-component-8678677fb7-jcjq2 Total loading time: 0 Render date: 2026-10-15T21:41:06.365Z Has data issue: false hasContentIssue false
  • English
  • Français

LCVD of CNx Layers from NH3,/CCI4. Mixture using CuBr Vapor Laser

Published online by Cambridge University Press:  10 February 2011

B. Ivanov ,
C. Popov ,
D. Dimitrov ,
Y Shanov ,
L. Zambov ,
M. Georgiev  and
G. Peev
B. Ivanov
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
C. Popov
Affiliation:
Central Laboratory of Photoprocesses “Academician Jordan Malinowski”, Bulgarian Academy of Sciences, Acad. Georgi Bontchev St., Bl. 109, 1113 Sofia, Bulgaria
D. Dimitrov
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tsarigradsko Chaussee 72, 1784 Sofia, Bulgaria
Y Shanov
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
L. Zambov
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
M. Georgiev
Affiliation:
Dept. of Inorganic Chemistry, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
G. Peev
Affiliation:
Dept. of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kliment Ohridski St., 1756 Sofia, Bulgaria
Get access

Abstract

Amorphous CNx films were obtained on monocrystalline silicon substrates by direct writing laser induced chemical vapor deposition from CCI4 and NH3 using CuBr vapor laser. The main process parameters (scanning speed, laser power, background temperature) were varied in wide ranges. The deposition rates in the laser spot were in the range of 1 – 10 μm/s. Scanning electron microscopy showed that the layers had rather rough surface. The deposited films were composed of carbon, nitrogen, silicon and oxygen, as detected by AES and EDX analyses. Chemical bonding structure was investigated by FTIR and showed absorption bands corresponding to different chemical groups - CH, CH2, CH3, C=C, C=N, C=O, Si-O, Si-C, Si-N and C-N. The electrical measurements of the deposited films showed that their resistivity varied from 0.15 to 1.40 MΩ.cm and it was very sensitive to the deposition conditions.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 271
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Liu, A.Y. and Cohen, M.L., Science 245, 841 (1989).Google Scholar
2. Sekine, T., Kanda, H., Bando, Y., Yokoyama, M. and Hojou, K., J. Mat. Sci. Lett. 9, 1376 (1990).Google Scholar
3. Niu, C., Yuan, Z. and Lieber, C.M., Science 261, 334 (1993).Google Scholar
4. Hoffman, A., Gouzman, I. and Brener, R., Appl. Phys. Lett. 64, 845 (1994).Google Scholar
5. Boyd, K.J., Marton, D., Todorov, S.S., Al-Bayati, A.H., Kulik, J., Zuhr, R.A. and Rabalais, J.W., J. Vac. Sci. Technol. A 13, 2110 (1995).Google Scholar
6. Bousetta, A., Lu, M., Bensaoula, A. and Schultz, A., Appl. Phys. Lett. 65, 696 (1994).Google Scholar
7. Sjöström, H., Ivanov, I., Johansson, M., Hultman, L., Sundgren, J.-E., Hainsworth, S.V., Page, T.F. and Wallenberg, L.R., Thin Solid films 246, 103 (1994).Google Scholar
8. Kumar, S. and Tansley, T.L., J. Appl. Phys. 76, 4390 (1994).Google Scholar
9. Konvetakis, J., Bandari, A., Todd, M., Wilkens, B. and Cave, N., Chem Mater. 6, 811 (1994).Google Scholar
10. Falk, F., Meinschien, J., Mollekopf, G., Schuster, K. and Stafast, H., Mater. Sci. Eng. B 46, 89 (1997).Google Scholar
11. Falk, F., Meinschien, J., Schuster, K. and Stafast, H., presented at the 1997 E-MRS Spring Meeting, Strasbourg, France, 1997 (unpublished).Google Scholar
12. Alexandrescu, R., Cireasa, R., Pugna, G., Crunteanu, A., Petcu, S., Morjan, I., Mihailescu, I.N. and Andrei, A., Appl. Surf. Sci. 109/110, 544 (1997).Google Scholar
13. Shanov, V., Ivanov, B. and Popov, C., Thin Solid films 207, 71 (1992).Google Scholar
14. Haba, B., Hussey, B. and Gupta, A., J. Appl. Phys. 69, 2871 (1991).Google Scholar
15. Nissim, Y.I., Lietoila, A., Gold, R.B. and Gibbons, J.F., J. Appl. Phys. 51, 274 (1980).Google Scholar
16. Robinson, J. W., Handbook of Spectroscopv. Volume II, (CRC Press, Cleveland, 1974) pp. 82–92.Google Scholar
17. Lee Smith, A., Applied Infrared Spectroscopv. (John Wiley & Sons, New York, 1977) pp. 286–313.Google Scholar
18. Ong, C.W., Zhao, X.-A., Tsang, Y.C., Choy, C.L. and Chan, P.W., Thin Solid films 280, 1 (1996).Google Scholar
19. Wixom, M.R., J. Am. Ceram. Soc. 73, 1686 (1990).Google Scholar
20. Lee, T.C., Fung, S., Beling, C.D. and Au, H.L., J. Appl. Phys. 72, 4739 (1992).Google Scholar
21. Cibils, R.M. and Buitrago, R.H., J. Appl. Phys. 58, 1072(1985).Google Scholar