Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-30T04:04:41.539Z Has data issue: false hasContentIssue false
  • English
  • Français

Light Sensitive Polymer Thin Film Transistors Based on BAS-PPE

Published online by Cambridge University Press:  17 March 2011

Yifan Xu ,
Paul R. Berger ,
James N. Wilson  and
Uwe H.F. Bunz
Yifan Xu
Affiliation:
Department of Electrical and Computer EngineeringThe Ohio State University, Columbus, OH 43210, USA
Paul R. Berger*
Affiliation:
Department of Electrical and Computer EngineeringThe Ohio State University, Columbus, OH 43210, USA
James N. Wilson
Affiliation:
School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA
Uwe H.F. Bunz
Affiliation:
School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA
*
a)Author to whom correspondence should be addressed. Also at: Department of Physics, Smith Laboratory, 174 W. 18th Avenue, Columbus, OH 43210; Electronic mail: pberger@ieee.org
Get access

Extract

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5- bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo- generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I13.7
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Friend, R., Burroughes, J., and Shimoda, T., Physics World, 6, 35 (1999).Google Scholar
2. Burroughes, J.H., Bradley, D.D.C., Brown, A.R., Marks, R.N., Mackay, K., Friend, R.H., Burns, P.L., and Holmes, A.B., Nature, 347, 539 (1990).Google Scholar
3. Friend, R.H., Gymer, R.W., Holmes, A.B., Burroughes, J.H., Marks, R.N., Taliani, C., Bradley, D.D.C., Santos, D.A. Dos, Bredas, J.L., Logdlund, M., and Salaneck, W.R., Nature, 397, 121 (1999).Google Scholar
4. Sirringhaus, H., Wilson, R.J., Friend, R.H., Inbasekaran, M., Wu, W., Woo, E.P., Grell, M., and Bradley, D.D.C., Appl. Phys. Lett., 77, 406 (2000).Google Scholar
5. Bao, Z., Dodabalapur, A., and Lovinger, A., Appl. Phys. Lett., 69, 4108 (1996).Google Scholar
6. Sirringhaus, H., Tessler, N., and Friend, R.H., Synthetic Metals, 102, 857 (1999).Google Scholar
7. Sirringhaus, H., Tessler, N., and Friend, R.H., Science, 280, 1741 (1998).Google Scholar
8. Wilson, J. N., Windscheif, P. M., Evans, U., Myrick, M. L., and Bunz, U. H. F.. Macromolecules, 35, 8681 (2002).Google Scholar
9. Montali, A., Smith, P., and Weder, C.. Synthetic Metals, 97, 123 (1998).Google Scholar
10. Narayan, K. S. and Kumar, N.. Applied Physics Letters, 79, 1891 (2001).Google Scholar