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Localized States in Electron-Irradiated GaAs

Published online by Cambridge University Press:  28 February 2011

S. D. Kouimtzi ,
C. Melidis  and
C. Achtlleos
S. D. Kouimtzi
Affiliation:
Department of Physics, University of Thessaloniki, Greece and J.J. Thomson Physical Laboratory, University of Reading, Reading, U.K.
C. Melidis
Affiliation:
Department of Physics, University of Thessaloniki, Greece.
C. Achtlleos
Affiliation:
Department of Physics, University of Thessaloniki, Greece.
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Abstract

Band tailing produced by electron irradiation of n-type GaAs at helium temperatures is studied. It has been observed that conductance in the band tailing occurs via localized states as evidenced by the observation of a conductance having a frequency dependence of the form σ⊥ωs where ≈ 1.

Sufficient degree of damage induces variable range hopping, σ ∝ exp (-b/Tl/4) in a defect band. The frequency dependence of the conductivity in this band is very weak.

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References

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