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Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

Published online by Cambridge University Press:  15 February 2011

N. E. B. Cowern ,
E. J. H. Collart ,
J. Politiek ,
P. H. L. Bancken ,
J. G. M. Van Berkum ,
K. Kyllesbech Larsen ,
P.A Stolk ,
H. G. A. Huizing ,
P. Pichler  and
A. Burenkov
...Show all authors
N. E. B. Cowern
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
E. J. H. Collart
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
J. Politiek
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P. H. L. Bancken
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
J. G. M. Van Berkum
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
K. Kyllesbech Larsen
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P.A Stolk
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
H. G. A. Huizing
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P. Pichler
Affiliation:
Fraunhofer-Institut für Integrierte Schaltungen, Schottkystrasse 10, D-91058 Erlangen, Germany
A. Burenkov
Affiliation:
Fraunhofer-Institut für Integrierte Schaltungen, Schottkystrasse 10, D-91058 Erlangen, Germany
D. J. Gravesteijn
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

Low energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 265
Copyright
Copyright © Materials Research Society 1997

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References

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