Hostname: page-component-cb9f654ff-hn9fh Total loading time: 0 Render date: 2025-09-02T08:35:34.886Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetization of Random and Nonrandom (Cd,Mn)Te Alloys

Published online by Cambridge University Press:  26 February 2011

D. Heiman ,
E. D. Isaacs ,
P. Becla  and
S. Foner
D. Heiman
Affiliation:
Francis Bitter National Magnet Laboratory Massachusetts Institute of Technology, Cambridge, MA 02139
E. D. Isaacs
Affiliation:
Francis Bitter National Magnet Laboratory Massachusetts Institute of Technology, Cambridge, MA 02139
P. Becla
Affiliation:
Francis Bitter National Magnet Laboratory Massachusetts Institute of Technology, Cambridge, MA 02139
S. Foner
Affiliation:
Francis Bitter National Magnet Laboratory Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Pulsed-field magnetization measurements up to 40 T by Faraday rotation were made for random alloy Cd1−xMnx Te with 0.1 < x < 0.5. At liquid helium temperature the magnetization can be separated into the sum of two components: a paramagnetic Brillouin-like part that saturates by B=15 T, and a part linear in B. For large x, the linear part dominates and becomes independent of x. Mean-field calculations suggest that an enhanced magnetization can be obtained with new ordered-alloy crystal structures which have reduced antiferromagnetic cancellations.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 21
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

Also, Department of Physics.Google Scholar
1. Brandt, N.B. and Moshchalkov, V.V., Adv. Phys. 33, 193 (1984); J.K. Furdyna, J. Appl. Phys. 53, 7637 (1982); and references cited therein.Google Scholar
2. Oseroff, S. and Keesom, P.H., in “Semiconductors and Semimetals,” ed. by Willardson, R.K. and Beer, A.C., (Academic Press, Inc., New York, 1986).Google Scholar
3. Galazka, R.R., Nagata, S. and Keesom, P.H., Phys. Rev. B22, 3344 (1980).Google Scholar
4. Wolff, P.A., in “Semiconductors and Semimetals,” ed. by Willardson, R.K. and Beer, A.C., (Academic Press, Inc., New York, 1986).Google Scholar
5. Gaj, J.A., Planel, R. and Fishman, G., Solid State Commun. 29, 435 (1979).Google Scholar
6. Heiman, D., Shapira, Y., Foner, S., Khazai, B., Kershaw, R., Dwight, K., and Wold, A., Phys. Rev. B29, 5634 (1983).Google Scholar
7. Heiman, D., Isaacs, E.D., Becla, P., and Foner, S. (Phys. Rev. B).Google Scholar
8. Heiman, D., Rev. Sci. Instrum. 56, 684 (1985).Google Scholar
9. Zayhowski, J.J., Ph.D.Thesis, Massachusetts Institute of Technology (1986).Google Scholar
10. Shapira, Y., Foner, S., Ridgley, D., Dwight, K., and Wold, A., Phys. Rev. B30, 4021 (1984); and Y. Shapira, S. Foner, P. Becla, D.N. Domingues, M.J. Naughton and J.S. Brooks, Phys. Rev. B33, 356 (1986).Google Scholar
11. Brooks-Harris, A. and Kirkpatrick, S., Phys. Rev. B16, 542 (1977).Google Scholar
12. Smart, J.S., Effective Field Theories of Magnetism, (Saunders, W.B., Philadelphia, 1966).Google Scholar
13. Breed, D.J., Gilijamse, K., Sterkenburg, J.W.E., and Miedema, A.K., Physica 68, 303 (1973).Google Scholar
14. Anderson, P.W., Phys. Rev. 79, 705 (1950).Google Scholar
15. Aggarwal, R.L., Jasperson, S.N., Becla, P., and Galazka, R.R., Phys. Rev. B32, 5132 (1985).Google Scholar
16. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Gu, B.P., Hefetz, Y., and Nurmikko, A.V., Appl. Phys. Lett. 48, 1482 (1986); A.V. Nurmikko, D. Lee, Y. Hefetz, L.A. Kolodziejski, and R.L. Gunshor, Proc. 18th Int. Conf. Phys. Semicond., Stockholm, 1986, (to be published).Google Scholar
17. Wolff, P.A., Heiman, D., Isaacs, E.D., Becla, P., Foner, S., Ram-Mohan, L.R., Ridgley, D.H., Dwight, K., and Wold, A., Proceedings of the International Conference on the Application of High Magnetic Fields in Semiconductor Physics, Wurzburg, August 1986 (to be published).Google Scholar
18. Shapira, Y. and Foner, S., Phys. Rev. B1, 3083 (1970).CrossRefGoogle Scholar
19. Ehrenreich, H., Hass, K.C., Johnson, N.F., Larson, B.E., and Lempert, R.J., Proceedings of the 18th Int. Conf. Phys. Semicond., Stockholm, 1986, (to be published).Google Scholar
20. Srivastava, G.P., Martins, J.L., and Zunger, A., Phys. Rev. B31, 2561 (1985); T.S. Kuan, T.F. Kuech, W.I. Wang, and E.L. Wilkie, Phys. Rev. Lett. 54, 201 (1985).Google Scholar
21. Duke, C.B., Mailhiot, C., Paton, A., Kahn, A., and Stiles, K., J. Vac. Sci. Tech. A4, 947 (1986).Google Scholar