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MBE Grown Planar Doped Barrier Diodes

Published online by Cambridge University Press:  10 February 2011

Vo Van Tuyen
Vo Van Tuyen*
Affiliation:
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science Budapest 114, P.O.Box 49., H-1525, Hungary, tuyen@mfa.kfki.hu
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Abstract

The realization of Planar Doped Barrier Diode (PDBD) presented in this paper starts out from the limits of the MBE layer growth technology. The limitations due to the background doping concentration and the diffusion of the n and p type dopants during the epitaxial growth are considered. The next parameter is the height of the potential barrier. The choice of this value depends on the requirements of the application. It must take into consideration the current transport mechanisms and the current limitation appearing at higher bias levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 171
Copyright
Copyright © Materials Research Society 1999

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References

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