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Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe

Published online by Cambridge University Press:  17 March 2011

Robert J. Hillard
Affiliation:
Solid State Measurements, Inc. 110 Technology Drive, Pittsburgh, PA 15275, rhillard@ssm-inc.com
Robert G. Mazur
Affiliation:
Solid State Measurements, Inc. 110 Technology Drive, Pittsburgh, PA 15275
William J. Alexander
Affiliation:
Solid State Measurements, Inc. 110 Technology Drive, Pittsburgh, PA 15275
C. Win Ye
Affiliation:
Solid State Measurements, Inc. 110 Technology Drive, Pittsburgh, PA 15275
Mark C. Benjamin
Affiliation:
Solid State Measurements, Inc. 110 Technology Drive, Pittsburgh, PA 15275
John O. Borland
Affiliation:
J.O.B Technologies, 5 Farrington Lane, South Hamilton, MA 01982
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Abstract

An accurate method to measure the four point probe (4PP) sheet resistance (Rs) of USJ Source-Drain structures is described. The new method utilizes Elastic Material probes (EM- probe) to form non-penetrating contacts to the silicon surface. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is selected so that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with SIMS junction depths as shallow as 15 nm have been measured. The sheet resistance values obtained with the new EM-probe 4PP method were found to be consistent with expectations. In this paper, the method will be demonstrated on a variety of implanted USJ structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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