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Microscopic Identification of Optical Defects in Silicon by Photoluminescence

Published online by Cambridge University Press:  28 February 2011

R. Sauer
R. Sauer*
Affiliation:
Physikalisches Institut (4), Universität Stuttgart D-7000 Stuttgart 80, Pfaffenwaldring 57, F.R., Germany
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Abstract

The paper reviews isotope effects observed in the photoluminescence (or absorption) of deep defects in silicon introduced by irradiation damage, heating, quenching or during crystal growth. Three examples are discussed in more detail where photoluminescence methods, partially in combination with other analytical methods, have led to microscopic defect models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 507
Copyright
Copyright © Materials Research Society 1985

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