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Model-based Quantitative Assessment of Crystallinity and Parasitic Absorption in Microcrystalline Silicon Solar Cells

Published online by Cambridge University Press:  15 June 2012

Thomas Lanz ,
Corsin Battaglia ,
Christophe Ballif  and
Beat Ruhstaller
Thomas Lanz
Affiliation:
Zurich University of Applied Sciences, Institute of Computational Physics, 8401 Winterthur, Switzerland
Corsin Battaglia
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, 2000 Neuchâtel, Switzerland
Christophe Ballif
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, 2000 Neuchâtel, Switzerland
Beat Ruhstaller
Affiliation:
Zurich University of Applied Sciences, Institute of Computational Physics, 8401 Winterthur, Switzerland
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Abstract

We investigate the influence of the crystallinity of the absorber layer and parasitic absorption in the doped layers and electrodes on the external quantum efficiency and reflection of microcrystalline silicon (μc-Si:H) solar cells. Using an optical light scattering model we systematically study variations in the crystallinity and validate a simple normalization procedure that allows assessing the gains that can be achieved by reducing the parasitic absorption. The optimization potential is demonstrated with solar cell samples with increased crystallinity and eliminated parasitic absorption.

Keywords

Sisimulationoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 383 - 387
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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