Hostname: page-component-7f64f4797f-fz5kh Total loading time: 0 Render date: 2025-11-04T00:37:21.762Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of Beta Conductivity in Tritiated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

Stefan Costea ,
Franco Gaspari ,
Tome Kosteski ,
Stefan Zukotynski ,
Nazir P. Kherani  and
Walter T. Shmayda
Stefan Costea
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Franco Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Tome Kosteski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Stefan Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
Nazir P. Kherani
Affiliation:
Ontario Power Technologies, Toronto, Ontario, M8Z 5S4, Canada
Walter T. Shmayda
Affiliation:
Ontario Power Technologies, Toronto, Ontario, M8Z 5S4, Canada
Get access

Abstract

The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A27.4
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Gaspari, F., Kosteski, T., Zukotynski, S., Kherani, N. P., and Shmayda, W., Phil. Mag. B 80, 561 (2000).Google Scholar
[2] Kosteski, T., Kherani, N.P. Gaspari, F., Zukotynski, S., and Shmayda, W.T., J. Vac. Sci. Technol. A 16, 893 (1998).Google Scholar
[3] Morgado, E., Phil. Mag. B 63, 529 (1991).Google Scholar
[4] Okamoto, H. and Hamakawa, Y., Solid St. Commun. 24, 23 (1977).Google Scholar
[5] Mott, N.F. and Davis, E.A. in Electronic Processes in Non-crystalline Materials (Clarendon Press, 1979), p. 47.Google Scholar
[6] Crandall, R.S., Phys. Rev. B., 43, 4057 (1991).Google Scholar
[7] Schmidt, J. A., Arce, R. D., Koropecki, R. R., Buitrago, R. H., Phys. Rev. B 59, 7 (1999)Google Scholar