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Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

S. V. Novikov
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
L. X. Zhao
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
C. T. Foxon
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
B. Ja. Ber
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
A. P. Kovarsky
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
I. Harrison
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2 RD, UK
M. W. Fay
Affiliation:
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, Nottingham, NG7 2RD, UK
P. D. Brown
Affiliation:
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, Nottingham, NG7 2RD, UK
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Abstract

GaN layers periodically-doped with arsenic were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Secondary ion mass spectroscopy studies using different secondary ions clearly confirmed the existence of As-modulation in the GaN/GaN:As periodically-doped structures, however, the degree of As-modulation is still under discussion. The use of modulation doping with As has a strong influence on the optical properties of GaN/GaN:As structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy
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