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Morphological transition of Ge islands on Si(001) grown by LPCVD

Published online by Cambridge University Press:  10 February 2011

M. Goryll ,
L. Vescan  and
H. Lüth
M. Goryll
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
L. Vescan
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700°C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 205
Copyright
Copyright © Materials Research Society 1999

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References

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