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Nonvolatile memories based on AlOx embedded ZrHfO high-k gate dielectric

Published online by Cambridge University Press:  17 June 2014

Shumao Zhang ,
Yue Kuo ,
Xi Liu  and
Chi-Chou Lin
Shumao Zhang
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Xi Liu
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122, U.S.A. Deptartment of Industrial and Systems Engineering, Ohio University, Athens, OH 45701, U.S.A.
Chi-Chou Lin
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, TX 77843-3122, U.S.A.
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Abstract

MOS capacitors with the ZrHfO/AlOx/ZrHfO high-k gate dielectric stack were prepared and characterized for memory functions. The device prefers to trap holes, i.e., under the negative gate voltage, rather than electrons, i.e., under the positive voltage. The hole-trapping process is time and voltage dependent. The weakly trapped holes are quickly released upon the remove of the stress voltage. However, more than 30% of the originally trapped holes can be retained in the device after 10 years. The AlOx embedded ZrHfO high-k stack is a suitable gate dielectric structure for nonvolatile memories.

Keywords

microelectronicsmemorydielectric properties

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Type
Articles
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MRS Online Proceedings Library (OPL) , Volume 1691: Symposium BB – Materials for End-of-Roadmap Devices in Logic, Power and Memory , 2014 , mrss14-1691-bb10-04
Copyright
Copyright © Materials Research Society 2014 

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