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Novel Dielectric Materials for Organic Electronics

Published online by Cambridge University Press:  01 February 2011

Antonio Facchetti
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA.
Myung-Han Yoon
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA.
He Yan
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA.
Tobin J. Marks
Affiliation:
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA.
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Abstract

We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved at very low operational biases (<1V), without serious leakage currents (<10-8 A/cm at 1V).

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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