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Numerical Modeling of Electrothermal Effects in Silicon Nanowires

Published online by Cambridge University Press:  01 February 2011

Cicek Boztug
Affiliation:
cicek@engr.uconn.edu, University of Connecticut, Electrical Engineering, Jewett 110, Storrs, CT, 06269, United States, 8605486945
Gokhan Bakan
Affiliation:
gokhan.bakan@uconn.edu, University of Connecticut, Department of Electrical and Computer Engineering, Storrs, CT, 06269, United States
Mustafa Akbulut
Affiliation:
mustafa@engr.uconn.edu, University of Connecticut, Department of Electrical and Computer Engineering, Storrs, CT, 06269, United States
Ali Gokirmak
Affiliation:
gokirmak@engr.uconn.edu, University of Connecticut, Department of Electrical and Computer Engineering, Storrs, CT, 06269, United States
Helena Silva
Affiliation:
silva@engr.uconn.edu, University of Connecticut, Department of Electrical and Computer Engineering, Storrs, CT, 06269, United States
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Abstract

Asymmetric melting was observed in electrically pulsed n-type (phosphorus) nanocrystalline silicon (nc-Si) wires fabricated lithographically. Scanning electron microscope (SEM) images taken from the pulsed wires showed that melting initiates from the ground terminal end of the wires instead of the center as initially expected. Asymmetry in the temperature profile is caused by heat exchanged between charge carriers and phonons when an electrical current is passed along a temperature gradient. This effect is known as Thomson effect, a thermoelectric heat transfer mechanism. One dimensional (1D) time dependent heat diffusion equation including Thomson heat term was solved to model the temperature profile on our structures. The modeling results show that Thomson effect introduces significant shifts in the temperature distribution. The effect of Thomson heat is modeled for various electrical pulse conditions and wires dimensions. Our results indicate that Thomson effect is significant in small scale electronic devices operating under high current densities.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

1. Chen, G., Shakouri, A., J. Heat Trans. 124, 242 (2002).Google Scholar
2. Huang, M. J., Yen, R. H., and Wang, A. B., International Journal of Heat and Mass Transfer 48, 413 (2005).Google Scholar
3. Pirovano, A., Lacaita, A. L., Benvenuti, A., Pellizzer, F., Bez, R., IEEE Trans. Elect. Dev. 51, 452 (2004).Google Scholar
4. Pop, E., Sinha, S. and Goodson, K. E., Proceedings of the IEEE 94, 1587 (2006).Google Scholar
5. Mastrangelo, C. H., Yeh, J. H., Muller, R. S., IEEE Trans. Elect. Dev. 39, 1363 (1992)Google Scholar
6. Jungen, A., Pfenninger, M., Tonteling, M., Stampfer, C., Hierold, C., J. Micromech. Microeng. 16, 1633 (2006)Google Scholar
7. Thomas, L. C., Heat Transfer Professional Version (Prentice Hall, Inc, New Jersey, 1993).Google Scholar
8. Lin, L., Chiao, M., Sens. Actuators A 55, 35 (1996).Google Scholar
9. MacDonald, D. K. C., Thermoelectricity: an Introduction to the Principles (Dover Publications Inc., Mineola, NY, 2006) P. 924.Google Scholar
10. Fulkerson, W., Moore, J. P., Williams, R. K., Graves, R. S., McElroy, D. L., Phys. Rew. 167, 765 (1968).Google Scholar
11. Gaidry, T. H. T., “Thermal Conductivity, Seebeck Coefficient, and Electrical Resistivity of Heavily Phosphorous-Doped Silicon from 313 K to 673 K,” Technical Report, South Dakota School of Mines and Technology Rapid City, Department of Physics, available from the National Technical Information Service, (1967).Google Scholar
12. Jones, D. I., Comber, P. G. Le, Spear, W. E., Phil. Mag. 36, 541 (1977)Google Scholar
13. Touloukian, Y. S., Thermophysical Properties of High Temperature Solid Materials (The Macmillan Company NY, 1967).Google Scholar
14. Lott, C. D., McLain, T. W., Harb, J. N., and Howell, L. L., Sens. Actuators A 101, 239 (2002).Google Scholar