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Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

Published online by Cambridge University Press:  25 February 2011

Mukesh Kumar ,
Gregory N. De Brabander ,
Peter Chen ,
Joseph T. Boyd ,
Andrew J. Steckl ,
Ahn Goo Choo ,
Howard E. Jackson ,
Robert D. Burnham  and
Stephen C. Smith
Mukesh Kumar
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Gregory N. De Brabander
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Peter Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Joseph T. Boyd
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Andrew J. Steckl
Affiliation:
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 452210–0030
Ahn Goo Choo
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221–0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221–0011
Robert D. Burnham
Affiliation:
Amoco Research Center, Naperville, Illinois 60566
Stephen C. Smith
Affiliation:
Amoco Research Center, Naperville, Illinois 60566
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Abstract

Optical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

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References

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