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Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs

Published online by Cambridge University Press:  28 February 2011

D. E. Aspnes ,
J. P. Harbison ,
A. A. Studna  and
L. T. Florez
D. E. Aspnes
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
J. P. Harbison
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
A. A. Studna
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
L. T. Florez
Affiliation:
Bellcore, Red Bank, N.J. 07701–7020
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Abstract

We compare the dynamic responses of reflection high energy electron diffraction (RHEED) and optical reflectance-difference (RD) signals caused by abrupt changes in incident fluences of Ga and As during MBE growth of GaAs on (001) GaAs. Our results reveal that RHEED and RD originate mainly, although not completely, from structural order and chemical bonding, respectively, and thus provide complementary information for real-time studies of MBE growth. We also measure the wavelength dependence of the RD spectrum and show that it can be described approximately from 2 to 4 eV by a single Lorentzian absorption line centered at 2.4 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 57
Copyright
Copyright © Materials Research Society 1987

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References

1. Arthur, J. R. and LePore, J. J., J. Vac. Sci. Technol. 6, 545 (1969).CrossRefGoogle Scholar
2. Cho, A. Y., Surface Sci. 17 494 (1969).CrossRefGoogle Scholar
3. Neave, J. H., Joyce, B. A., Dobson, P. J., and Norton, N., Appl. Phys. A31, 1 (1983).CrossRefGoogle Scholar
4. Van Hove, J. M., Cohen, P. I., and Lent, C. S., J. Vac. Sci. Technol. A1, 546 (1983).CrossRefGoogle Scholar
5. Sakamoto, T., Funabashi, H., Ohta, K., Nakagawa, T., Kawai, N. J., Kojima, T., and Bando, Y., Superlatt. and Microstruc. 1, 347 (1985).CrossRefGoogle Scholar
6. Madhukar, A., Lee, T. C., Yen, M. Y., Chen, P., Kim, J. Y., Ghaisas, S. V., and Newman, P. G., Appl. Phys. Lett. 46, 1148 (1985).CrossRefGoogle Scholar
7. Chen, P., Madhukar, A., Kim, J. Y., and Lee, T. C., Appl. Phys. Lett. 48, 650 (1986).CrossRefGoogle Scholar
8. Lewis, B. F., Grunthaner, F. J., Madhukar, A., Lee, T. C., and Fernandez, R., J. Vac. Sci. Technol. B 3, 1317 (1985).CrossRefGoogle Scholar
9. Van Hove, J. M., Pukite, P. R., and Cohen, P. I., J. Vac. Sci. Technol. B3 563 (1985).CrossRefGoogle Scholar
10. Aspnes, D. E. and Studna, A. A., Phys. Rev. Lett. 54, 1956 (1985).CrossRefGoogle Scholar
11. Aspnes, D. E., J. Vac. Sci. Technol. B3, 1498 (1985).CrossRefGoogle Scholar
12. Aspnes, D. E. and Studna, A. A., Phys. Rev. B 27 985 (1983).CrossRefGoogle Scholar
13. Aspnes, D. E. and Studna, A. A., Rev. Sci. Instrum. 49, 291 (1978).CrossRefGoogle Scholar
14. Vina, L. and Cardona, M., Phys. Rev. B 30, 1979 (1984).CrossRefGoogle Scholar
15. Farrell, H. H., J. Vac. Sci. Technol. (in press.)Google Scholar
16. Larsen, P. K., van der Veen, J. F., Mazur, A., Pollmann, J., Neave, J. H., and Joyce, B. A., Phys. Rev. B 26, 3222 (1982).CrossRefGoogle Scholar