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Optical Spectroscopy of Dry-Etched GaN-Nanostructures

Published online by Cambridge University Press:  15 February 2011

H. Zull
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
J. MÜller
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
J. Koeth
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
F. Kieseling
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
A. Forchel
Affiliation:
Technische Physik, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
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Abstract

We have realized GaN wire gratings with periods down to 80 nm and with wire widths down to 26 nm- GaN layers of good structural and optical quality with thicknesses down to 100 nm were grown by electron cyclotron resonance assisted MBE (ECR-MBE). The grating structures were fabricated by high resolution electron beam lithography and electron cyclotron enhanced reactive ion etching (ECR-RIE) using CL2/Ar as etching gas. The optical properties of the GaN structures were investigated by photoluminescence (PL) spectroscopy in the temperature range between 40 K and 110 K. The wire patterns show intense excitonic photoluminescence and only a small dry etched induced degradation of the quantum efficiency even for the narrowest wires.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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