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Oxidation of Strained Si-Ge Layers Grown by MBE

Published online by Cambridge University Press:  26 February 2011

G.L. Patton ,
S.S. Iyer ,
S.L. Delage ,
E. Ganin  and
R.C. Mcintosh
G.L. Patton
Affiliation:
IBM Research Division T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
S.S. Iyer
Affiliation:
IBM Research Division T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
S.L. Delage
Affiliation:
IBM Research Division T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
E. Ganin
Affiliation:
IBM Research Division T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
R.C. Mcintosh
Affiliation:
IBM Research Division T.J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

The oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 295
Copyright
Copyright © Materials Research Society 1988

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References

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