Hostname: page-component-cb9f654ff-kl2l2 Total loading time: 0 Render date: 2025-09-07T07:25:33.885Z Has data issue: false hasContentIssue false
  • English
  • Français

PE-CVD of F-Doped SiO2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane

Published online by Cambridge University Press:  15 February 2011

T. Shirafuji ,
M. Sawada ,
Y. Nakagami ,
Y. Hayashi  and
S. Nishino
T. Shirafuji
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
M. Sawada
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Y. Nakagami
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Y. Hayashi
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
S. Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Get access

Abstract

SiO2 films have been prepared from tetraisocyanatesilane (TICS, Si(NCO)4) by using a conventional capacitively coupled RF(13.56MHz) plasma-enhanced CVD method. The films show poor water resistivity, which originates in inclusion of NCO in the films. This has been improved by mixing O2 to the source gas. SiO:F films have been prepared by mixing SiF4. The film with F concentration of 6at.% has shown dielectric constant of 3.3, resistivity of 3.6×1015Ωcm at 1MV/cm and break-down electric field of 7.7MV/cm. Infrared spectrum of the film have contained no noticeable OH peak even after exposing to the air for 2 weeks.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 137
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Fukada, T. and Akahori, T., Extended Abstracts of Int. Conf. on Solid State Devices and Materials, p. 158 (1993).Google Scholar
2. Homma, T., Thin Solid Films 278, 28 (1996).Google Scholar
3. Hayasaka, N., Miyajima, H., Nakasaki, Y., Katsumata, R., Extended Abstracts of Int. Conf. on Solid State Devices and Materials, p. 157 (1995).Google Scholar
4. Katsumata, R., Miyajima, H., Nakasaki, Y., Hayasaka, N., Proc. 17th Dry Process Symp., p.269 (1995).Google Scholar
5. Hayasaka, N., Nishijima, Y., Miyajima, H., Tomioka, K., Nakata, R., Okano, H., Proc. 15th Dry Process Symp., p. 163 (1993).Google Scholar
6. Miyajima, H., Katsumata, R., Hayasaka, N., Okano, H., Proc. 16th Dry Process Symp., p.133 (1994).Google Scholar
7. Sawada, M., Shirafuji, T., Hayashi, Y., Tech. Rep. IEICE SDM 95–179, 35 (1995).[in Japanese]Google Scholar
8. Shirafuji, T., Sawada, M., Hayashi, Y., Proc. 13th Symp. Plasma Processing, p. 121 (1996).Google Scholar
9. Morishita, S., Gasser, W., Usami, K., Matsumura, M., J. Non-Cryst. Solids 187, 66 (1995).Google Scholar
10. Miller, F. A., Carlson, G. L., Spectrochimica Acta. 17, 977 (1967).Google Scholar
11. Taniguchi, H., Sugiura, O., Jpn. J. Appl. Phys. 33, L1485 (1994).Google Scholar
12. Pai, C.S., Chang, C.-P., J. Appl. Phys. 68, 793 (1990).Google Scholar
13. Takahashi, K., Tachibana, K., Trans. IEE Jpn. 111-A, 3 (1991).[in Japanese]Google Scholar
14. Tachibana, K., Phys. Rev. A 34, 1007 (1986).Google Scholar
15. Sugiura, O., (Private Communication).Google Scholar
16. Idris, I., Sugiura, O., Jpn. J. Appl. Phys. 34, L772 (1995).Google Scholar
17. Sze, S. M., Physics of Semiconductor Devices 2nd Ed. (Wiley, New York, 1981) pp. 402–407.Google Scholar