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Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack

Published online by Cambridge University Press:  24 July 2014

Alexandre Savtchouk ,
John D’Amico ,
Marshall Wilson ,
Jacek Lagowski ,
Wei-E Wang ,
Taewoo Kim ,
Gennadi Bersuker ,
Dmitry Veksler  and
Donghyi Koh
Alexandre Savtchouk
Affiliation:
Semilab SDI, LLC, 10770 N. 46th St., Suite E700, Tampa, FL 33617, U.S.A.
John D’Amico
Affiliation:
Semilab SDI, LLC, 10770 N. 46th St., Suite E700, Tampa, FL 33617, U.S.A.
Marshall Wilson
Affiliation:
Semilab SDI, LLC, 10770 N. 46th St., Suite E700, Tampa, FL 33617, U.S.A.
Jacek Lagowski
Affiliation:
Semilab SDI, LLC, 10770 N. 46th St., Suite E700, Tampa, FL 33617, U.S.A.
Wei-E Wang
Affiliation:
SEMATECH, 257 Fuller Rd #2200, Albany, NY 12203, U.S.A.
Taewoo Kim
Affiliation:
SEMATECH, 257 Fuller Rd #2200, Albany, NY 12203, U.S.A.
Gennadi Bersuker
Affiliation:
SEMATECH, 257 Fuller Rd #2200, Albany, NY 12203, U.S.A.
Dmitry Veksler
Affiliation:
SEMATECH, 257 Fuller Rd #2200, Albany, NY 12203, U.S.A.
Donghyi Koh
Affiliation:
SEMATECH, 257 Fuller Rd #2200, Albany, NY 12203, U.S.A.
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Abstract

We report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly used in Si IC manufacturing, uses incremental corona charge dosing, ΔQC, on the dielectric surface, and the measurement of surface voltage response, ΔVS, using a Kelvin-probe. Its application to In0.53Ga0.47As with a high-k stack required modifications related to the effects of dielectric trap induced voltage transients. The developed Corona Charge-Kelvin Probe Metrology adopted strictly differential measurements using ΔQC and ΔV, and corresponding differential capacitance rather than measurements based on total global charge, Q, and voltage, V, values.

Electrical characterization data including interface trap density, electrical oxide thickness, and dielectric leakage are presented for a sample containing an In0.53 Ga0.47 As channel overlaid with a bilayer (2nm Al2O3/5nm HfO2) dielectric stack that is considered to be very promising for application in performance NFETs with high-mobility channels.

Keywords

III-Vdielectric propertiesdefects

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1691: Symposium BB – Materials for End-of-Roadmap Devices in Logic, Power and Memory , 2014 , mrss14-1691-bb05-02
Copyright
Copyright © Materials Research Society 2014 

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References

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