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Pressure Ratio (PAs/PGa) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE

Published online by Cambridge University Press:  22 February 2011

M. Lagadas ,
Z. Hatzopoulos ,
M. Calamiotou ,
M. Kayiambaki  and
A. Christou
M. Lagadas
Affiliation:
Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
Z. Hatzopoulos
Affiliation:
Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
M. Calamiotou
Affiliation:
University of Athens, Department of Physics, Athens, Greece
M. Kayiambaki
Affiliation:
Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
A. Christou
Affiliation:
University of Maryland, Department of Materials Engineering, College Park, MD, USA
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Abstract

We have investigated the influence of the pressure ratio (PAs4/PGa) on the structural and electrical properties of GaAs layers grown at 250°C by MBE. SEM photographs have revealed smooth surfaces for PAs4/PGa≥15 and Double crystal X-ray rocking curves have shown an increase on the lattice mismatch δaI/a of the L.T. grown layers and high crystalline quality. Resistivity has not been affected by the different values of PAs4/PGa. n-GaAs epilayers grown on top of L.T. buffer layers have their mobility decreased and the electron trap density increased as revealed by Hall and DLTS measurements.

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