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Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

Published online by Cambridge University Press:  15 February 2011

Bing-Zong Li ,
Xin-Ping Qu ,
Guo-Ping Ru ,
Ning Wang  and
Paul Chu
Bing-Zong Li
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA, bzli@fudan.ac.cn
Xin-Ping Qu
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA, bzli@fudan.ac.cn
Guo-Ping Ru
Affiliation:
Dept. of Electronic Engineering, Fudan University, Shanghai, 200433, CHINA, bzli@fudan.ac.cn
Ning Wang
Affiliation:
Dept. Of Applied Physics, City University of Hong Kong, Hong Kong, CHINA
Paul Chu
Affiliation:
Dept. Of Applied Physics, City University of Hong Kong, Hong Kong, CHINA
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Abstract

A multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 117
Copyright
Copyright © Materials Research Society 2000

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