Various options that afford control of the TEOS, W, and Cu/barrier polishes were explored in the building of multilevel dual inlaid structures. Improved tool performance that enables more sophisticated down pressure control with higher resolution backpressure adjustments was employed for the oxide module to control the interlevel capacitances. Planarity at both the global and local levels at the oxide polish affords a good starting point for successive builds without metal pooling. In W CMP, small and controllable oxide erosion and plug recess was obtained with harder polishing pads. In Cu/barrier CMP, the tight overpolish/underpolish margin was maintained by head control and appropriate endpoint algorithms. A six-level build with tight and low sheet resistances and leakages was demonstrated.