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Properties of a-SiGe and Application to Stacked Solar Cell

Published online by Cambridge University Press:  26 February 2011

H. Itozaki  and
N. Fujita
H. Itozaki
Affiliation:
Sumitomo Electric Industries, Ltd., 1–1 Koyakita l-Chome Itami 664 Japan
N. Fujita
Affiliation:
Sumitomo Electric Industries, Ltd., 1–1 Koyakita l-Chome Itami 664 Japan
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Abstract

Deposition technique of a-SiGe:H and its application to a stacked solar sell were investigated. Properties of a-SiGe:H were improved by a glow discharge method with a negatively biased substrate, and a mercury sensitized photo CVD under lower pressure. An a-SiGe:H single junction solar cell was improved by slight boron doping to an i layer and insertion of a buffer layer into a p/i interface. A conversion efficiency of more than 10 % was obtained by a triple stacked solar cell on a alass substrate.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 507
Copyright
Copyright © Materials Research Society 1987

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