Hostname: page-component-7dd5485656-bt4hw Total loading time: 0 Render date: 2025-10-31T11:09:24.233Z Has data issue: false hasContentIssue false
  • English
  • Français

Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

Published online by Cambridge University Press:  29 July 2011

Stefan Tappertzhofen ,
Marek Hempel ,
Ilia Valov  and
Rainer Waser
Stefan Tappertzhofen
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Jülich Aachen Research Alliance, Fundamentals of Future Information Technology
Marek Hempel
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Jülich Aachen Research Alliance, Fundamentals of Future Information Technology
Ilia Valov
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Jülich Aachen Research Alliance, Fundamentals of Future Information Technology Forschungszentrum Jülich GmbH, Jülich, Germany
Rainer Waser
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Jülich Aachen Research Alliance, Fundamentals of Future Information Technology Forschungszentrum Jülich GmbH, Jülich, Germany
Get access

Abstract

Silicon dioxide based Electrochemical Metallization (ECM) cells were intensively studied as a promising candidate for CMOS compatible non-volatile memory devices. The resistance of ECM cells can be switched between a high resistive (OFF) state and a low resistive (ON) state by applying a sufficient voltage or current pulse. This resistance transition is attributed to the formation and rupture of a few nanometers in diameter metallic filament. However, the metal ion transport which is believed to be responsible for the filamentary switching mechanism is not understood in detail. In case of SiO2 we suppose protons or humidity may enhance the metal ion transport.

In this work we report our studies on the proton incorporation in amorphous SiO2 thin films focused on the impact of hydrogen and humidity on the resistive switching effect. The switching behavior was analyzed by current-voltage measurements performed at different ambient conditions. The incorporation of hydrogen has been confirmed by Time-of-Flight Secondary-Ion-Mass-Spectroscopy (ToF-SIMS). The results led to an expansion of the defect model proposed in the literature.

Keywords

diffusionthin filmfilamentary

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1330: Symposium J – Protons in Solids , 2011 , mrss11-1330-j01-02-k03-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Waser, R. and Aono, M., Nature Materials, 6 (2007)Google Scholar
2. Waser, R. and Valov, I., ECS Trans., 25 (2009)Google Scholar
3. Valov, I., Waser, R., Jameson, J. R. and Kozicki, M. N., Nanotechnology, in press (2011)Google Scholar
4. Schindler, C., “Resistive switching in electrochemical metallization memory cells”, RWTH Aachen (2009), p. 32 Google Scholar
5. Willis, B. G. and Lang, D. V., Thin Solid Films, 467 (2004)Google Scholar
6. Martienssen, W. and Warlimont, H. (Eds.), “Springer Handbook of Condensed Matter and Materials Data”, Springer (2005), p. 563 Google Scholar
7. Cao, C., He, Y., Torras, J., Deumens, E., Trickey, S. B. and Cheng, H., J. of Chem. Phys., 126 (2007)Google Scholar
8. McMillan, P. F. and Remmele, R. L. Jr., Amer.Miner., 71 (1986)Google Scholar
9. Armunanto, R., Schwenk, C. F. and Rode, B. M., J. Phys. Chem. A, 107 (2003)Google Scholar
10. Fulton, J. L., Kathmann, S. M., Schenter, G. K. and Balasubramanian, M., J. Phys. Chem. A, 113 (2009)Google Scholar
11. Knorr, N., Wirtz, R., Rosselli, S. and Nelles, G., J. Phys. Chem. C, 114 (2010)Google Scholar
12. Salh, R. and Fitting, H.-J., Phys. Stat. Sol., 4 (2006)Google Scholar
13. Waser, R., Dittmann, R., Staikov, G. and Szot, K., Adv. Mat., 21 (2009)Google Scholar