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Pulse Diffused N+ Layers in GaAs

Published online by Cambridge University Press:  15 February 2011

D. Eirug Davies ,
T.G. Ryan ,
J.P. Lorenzo  and
E. F. Kennedy
D. Eirug Davies
Affiliation:
Rome Air Development Center, Hanscom AFB, MA, 1731
T.G. Ryan
Affiliation:
Rome Air Development Center, Hanscom AFB, MA, 1731
J.P. Lorenzo
Affiliation:
Rome Air Development Center, Hanscom AFB, MA, 1731
E. F. Kennedy
Affiliation:
College of the Holy Cross, Worcester, MA, 1610
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Abstract

Pulse diffusion has been used for doping GaAs n-type to over 1019 cm−3. Surface arsenic loss is avoided through using As2Se3 as the diffusion source. A reduction in electrical activity similar to that reported for pulse annealed implanted layers occurs with any subsequent heat treatment. A resistive region, found at the surface of the profile, can be circumvented through additionally heating the GaAs thermally during the pulse diffusion and reducing the rapidity of the quench.

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References

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