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Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

Published online by Cambridge University Press:  21 February 2011

Hung-Yu Liu ,
Peng-Heng Chang ,
Jim Bohlman  and
Hun-Lian Tsai
Hung-Yu Liu
Affiliation:
Central research laboratories, MS 147, Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
Peng-Heng Chang
Affiliation:
Central research laboratories, MS 147, Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
Jim Bohlman
Affiliation:
Semiconductor Process and Design Center, MS 944 Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
Hun-Lian Tsai
Affiliation:
Central research laboratories, MS 147, Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
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Abstract

The interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 153
Copyright
Copyright © Materials Research Society 1988

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