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Radiation hard amorphous silicon particle sensors

Published online by Cambridge University Press:  01 February 2011

N. Wyrsch ,
C. Miazza ,
S. Dunand ,
C. Ballif ,
A. Shah ,
M. Despeisse ,
D. Moraes  and
P. Jarron
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
C. Miazza
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
S. Dunand
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
C. Ballif
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
M. Despeisse
Affiliation:
CERN, CERN Meyrin, 1211 Genève 23, Switzerland
D. Moraes
Affiliation:
CERN, CERN Meyrin, 1211 Genève 23, Switzerland
P. Jarron
Affiliation:
CERN, CERN Meyrin, 1211 Genève 23, Switzerland
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Abstract

Radiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

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References

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