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Radiation-Induced Segregation of Metals At Moving SiO2-Amorphous Si Interfaces

Published online by Cambridge University Press:  15 February 2011

J. S. Williams ,
M. Petravic ,
M. Conway  and
K. T. Short
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
M. Petravic
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
M. Conway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
K. T. Short
Affiliation:
Materials Division, Australian Nuclear Science and Technology Organisation, Private Mail Bag 1, Menai, 2234, Australia.
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Abstract

Secondary ion mass spectrometry and Rutherford backscattering/channeling analysis have been used to study the segregation of Au at moving Si-SiO2 interfaces during bombardment of Si with 15 keV O- ions. Essentially 100% of the Au is found to segregate at a bombardment temperature of 250°C, whereas only partial segregation occurs for room temperature bombardment. Up to 10 monolayers of Au can be segregated in disordered Si behind an SiO2 layer at 250°C. These results are discussed in terms of ion-assisted migration of Au in disordered Si and extremely low solubilities of Au in SiO2.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 575
Copyright
Copyright © Materials Research Society 1997

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