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The Reduction of The Defect Density in CdTe Buffer Layers for The Growth of HgCdTe Infrared Photodiodes on Si (211) Substrates

Published online by Cambridge University Press:  10 February 2011

H.-Y. Wei ,
L. Salamanca-Riba  and
N. K. Dhar
H.-Y. Wei
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD
N. K. Dhar
Affiliation:
U.S. Army Research Laboratory, Fort Belvior, VA
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Abstract

CdTe epilayers were grown by molecular beam epitaxy on As-passivated nominal (211) Si substrates using thin interfacial ZnTe layers. By using thin recrystallized (initially amorphous) ZnTe buffei layers, we utilized migration enhanced epitaxy (MEE) in the ZnTe layer and overcome the tendency toward three dimensional nucleation. The threading dislocation densities in 8–9 tm thick CdTe films deposited on the recrystallized amorphous ZnTe films were in the range of 2 to 5 × 105 cm−2. In addition to the reduction of threading dislocation density, the interface between the ZnTe layers and the Si substrate is much smoother and the microtwin density is an order of magnitude lower than in regular MEE growth. In order to understand the initial nucleation mechanism of the ZnTe on the As precursor Si surface, we also grew ZnTe epilayers on Te precursor treated Si substrates. The growth mode, microtwin density, and threading dislocation density are compared for films grown on Si substrates with different surface precursors and grown by different growth methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 329
Copyright
Copyright © Materials Research Society 1998

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