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Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

Published online by Cambridge University Press:  17 June 2014

H. García ,
H. Castán ,
S. Dueñas ,
E. Pérez ,
L. A. Bailón ,
K. Kukli ,
M. Ritala  and
M. Leskelä
H. García
Affiliation:
Dpto. Electricidad y Electrónica, E.T.S.I.Telecomunicación, University of Valladolid, 47011 Valladolid, Spain.
H. Castán
Affiliation:
Dpto. Electricidad y Electrónica, E.T.S.I.Telecomunicación, University of Valladolid, 47011 Valladolid, Spain.
S. Dueñas
Affiliation:
Dpto. Electricidad y Electrónica, E.T.S.I.Telecomunicación, University of Valladolid, 47011 Valladolid, Spain.
E. Pérez
Affiliation:
Dpto. Electricidad y Electrónica, E.T.S.I.Telecomunicación, University of Valladolid, 47011 Valladolid, Spain.
L. A. Bailón
Affiliation:
Dpto. Electricidad y Electrónica, E.T.S.I.Telecomunicación, University of Valladolid, 47011 Valladolid, Spain.
K. Kukli
Affiliation:
Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland. Institute of Physics, Department of Materials Science, University of Tartu, EE-51014 Tartu, Estonia.
M. Ritala
Affiliation:
Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland.
M. Leskelä
Affiliation:
Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland.
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Abstract

Ho2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

Keywords

dielectricelectrical propertiesmemory

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1691: Symposium BB – Materials for End-of-Roadmap Devices in Logic, Power and Memory , 2014 , mrss14-1691-bb10-10
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

International Technology Roadmap for Semiconductors. Available from http://www.itrs.net.Google Scholar
Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlsted, H., Petraru, A., and Hwang, C. S., Rep. Prog. Phys. 75, 076502 (2012).CrossRefGoogle Scholar
Waser, R., and Aono, M., Nature Mater. 6, 833 (2007).CrossRefGoogle Scholar
Seo, M., Rha, S. H., Kim, S. K., Han, J. H., Lee, W., Han, S., and Hwang, C. S., J. Appl. Phys. 110, 024105 (2011).CrossRefGoogle Scholar
Kim, S. K., Lee, S. W., Han, J. H., Lee, B., Han, S., and Hwang, C. S., Adv. Funct. Mater. 20, 2989 (2010).CrossRefGoogle Scholar
Acharyya, D., Hazra, A., and Bhattacharyya, P., Microelectron. Reliab. 54, 541 (2014).CrossRefGoogle Scholar
Kope, B. M., Tendulkar, M., Park, S. G., Lee, H. D., and Nishi, Y., Nanotechnology 22, 254029 (2011).CrossRefGoogle Scholar
Darbandy, G., Lime, F., Cerdeira, A., Estrada, M., Garduno, I., and Iñiguez, B., Semicond. Sci. Technol. 26, 115002 (2011).CrossRefGoogle Scholar
Pan, T.-M., and Huang, M.-D., Mater. Chem. Phys. 129, 919 (2011).CrossRefGoogle Scholar
Kukli, K., Kemell, M., Dimri, M. C., Puukilainen, E., Tamm, A., Stern, R., Ritala, M., and Leskelä, M., Sent to Thin Solid Films .Google Scholar
Päiväsaari, J., Putkonen, M., and Niinistö, L., Thin Solid Films 472, 275 (2005).CrossRefGoogle Scholar
Miao, F., Yang, J. J., Borghetti, J., Medeiros-Ribeiro, G., and Satnley Williams, R., Nanotechnology 22, 254007 (2011).CrossRefGoogle Scholar
Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., and Tiedke, S., J. Appl. Phys. 98, 033715 (2005).CrossRefGoogle Scholar
Chang, W. Y., Cheng, K. J., Tsai, J. M., Chen, H. J., Chen, F., Tsai, M. J., and Wu, T-B., Appl. Phys. Lett. 95, 042104 (2009).Google Scholar