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Sb2S3/SnSe thin film solar cells by thermal evaporation

Published online by Cambridge University Press:  10 September 2014

José Escorcia-García ,
Enue Barrios-Salgado ,
M.T.S. Nair  and
P.K. Nair
José Escorcia-García
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
Enue Barrios-Salgado
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
M.T.S. Nair
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
P.K. Nair
Affiliation:
Instituto de Energías Renovables – UNAM, Priv. Xochicalco S/N, Temixco, Morelos 62580, México.
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Abstract

We report a stable CdS/Sb2S3/SnSe heterojunction thin film solar cell deposited on SnO2:F (FTO) – coated glass substrates. Thermal evaporation at 10-5 Torr with substrate temperature of 400 °C was used to deposit Sb2S3 and SnSe thin films of 450 nm and 160 nm, respectively. Thin film Sb2S3 has an optical band gap (E g ) of 1.48 eV and photoconductivity (σ p ) of 4x10-7 Ω-1 cm-1 and thin film SnSe has an E g of 1.28 eV and σ p of 2 Ω-1 cm-1. The chemically deposited CdS thin film heated at 400 °C shows an E g of 2.34 eV and σ p of 0.1 Ω-1 cm-1. Stabilized solar cell structures with these thin films, FTO/CdS/Sb2S3/SnSe/C-Ag, showed open circuit voltage (V oc ) of 0.60 V, short circuit current density (J sc ) of 5.51 mA/cm2 and power conversion efficiency (η) of 0.96% with a fill factor FF of 0.29. In the absence of the SnSe layer, J sc decreases to 4.77 mA/cm2.

Keywords

thin filmcrystallinephotovoltaic

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References

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