Hostname: page-component-7dd5485656-bvgqh Total loading time: 0 Render date: 2025-10-31T16:43:44.554Z Has data issue: false hasContentIssue false
  • English
  • Français

Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

Gary A. Pollock ,
V. R. Deline  and
B. K. Furman
Gary A. Pollock
Affiliation:
Arco Solar, Inc., 20554 Plummer Street, Chatsworth, California 91311, USA
V. R. Deline
Affiliation:
Charles Evans & Associates, 1670 South Amphlett Boulevard, San Mateo, California 94402, USA
B. K. Furman
Affiliation:
Charles Evans & Associates, 1670 South Amphlett Boulevard, San Mateo, California 94402, USA
Get access

Abstract

A CAMECA IMS-3F secondary ion microscope has been used to investigate the presence of impurities in cast polycrystalline silicon wafers and to determine their lateral distribution. Cesium and oxygen ion bombardment were used to selectively detect potential impurities and extract their lateral distribution with submicron lateral resolution.Images of H, C, O, P, and Cu segregated in grain boundaries have been obtained from polycrystalline silicon.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 71
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Kazmerski, L. L., Ireland, P. J. and Ciszek, T. F., Appl. Phys. Lett. 36, 323 (1980).CrossRefGoogle Scholar
2. Thomas, M. T., Jones, R. H., Baer, D. R. and Bruemmer, S. M., The Phi Interface, Perkin-Elmer Corp., Physical Electronics Div. 3. (2), 3 (1980).Google Scholar
3. Christie, W. H., Smith, David H., Eby, R. E. and Carter, J. A., Am. Lab. 10, 19 (1979).Google Scholar
4. Slodzian, G. and Hennequin, J. F., C. R. Acad. Sci. 263, 1246 (1966).Google Scholar
5. Krohn, V., J. Appl. Phys. 33, 3523 (1962).CrossRefGoogle Scholar
6. Evans, C. A. Jr., Anal. Chem. 44, 67A (1972).Google Scholar