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SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices

Published online by Cambridge University Press:  13 May 2015

Karsten Fleck ,
Ulrich Böttger ,
Rainer Waser  and
Stephan Menzel
Karsten Fleck
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Fundamentals of Future Information Technology
Ulrich Böttger
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Fundamentals of Future Information Technology
Rainer Waser
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Fundamentals of Future Information Technology Forschungszentrum Jülich GmbH, Jülich, Germany
Stephan Menzel
Affiliation:
JARA – Fundamentals of Future Information Technology Forschungszentrum Jülich GmbH, Jülich, Germany
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Abstract

In this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.

Keywords

kineticsnanostructurememory

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References

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