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Sheet Density and Well Thickness Effects on Photoluminescence from Pseudomorphic HEMT Structures

Published online by Cambridge University Press:  26 February 2011

C. Colvard ,
N. Nouri ,
H. Lee  and
D. Ackley
C. Colvard
Affiliation:
Siemens Corporate Research, Inc., 755 College Rd. East, Princeton, NJ 08540
N. Nouri
Affiliation:
Siemens Corporate Research, Inc., 755 College Rd. East, Princeton, NJ 08540
H. Lee
Affiliation:
Siemens Corporate Research, Inc., 755 College Rd. East, Princeton, NJ 08540
D. Ackley
Affiliation:
Siemens Corporate Research, Inc., 755 College Rd. East, Princeton, NJ 08540
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Abstract

Low temperature photoluminescence was studied in a large number of pseudomorphic HEMT's having an InxGa1−xAs quantum well. The spectra show strong qualitative differences when the Fermi level is above or below the second conduction subband, and in the latter case they are power dependent. A slight enhancement is seen at the Fermi edge only when it lies close to the higher subband. Excellent agreement is found between the measured Fermi energy and the two-dimensional carrier density in the well.

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References

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