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Silicon Temperature and Thermal Gradients Measurements in a Rapid Thermal Processor Operating at Atmospheric Pressure or in Vacuum

Published online by Cambridge University Press:  28 February 2011

J-M. Dilhac ,
C. Ganibal  and
A. Martinez
J-M. Dilhac
Affiliation:
Laboratoire d'Automatique et d'Analyse des Systèmes du C.N.R.S., 7 avenue du colonel Roche, 31077 Toulouse, France
C. Ganibal
Affiliation:
Laboratoire d'Automatique et d'Analyse des Systèmes du C.N.R.S., 7 avenue du colonel Roche, 31077 Toulouse, France
A. Martinez
Affiliation:
Laboratoire d'Automatique et d'Analyse des Systèmes du C.N.R.S., 7 avenue du colonel Roche, 31077 Toulouse, France
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Abstract

Temperature-time profiles obtained by an optical pyrometer and a mechanically contacted thermocouple are first presented it appears that the thermocouple response is sensitive to the pressure in the processing chamber. The authors suggest that, in vacuum, the thermocouple is thermally isolated from the wafer, until the temperature is high enough for thermal radiation exchanges to occur. Experimental evidence of the influence of thermal history, and of gas pressure and flow, on temperature drop at periphery of the wafer is then given.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 259
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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