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Some Possibilities of using Defects for Applications in Semiconductors

Published online by Cambridge University Press:  03 September 2012

Michel Lannoo*
Affiliation:
I. E. M. N. (UMR CNRS No 9929), Département ISEN, 41, boulevard Vauban, 59046 LILLE CEDEX
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Abstract

Specific situations where defects have a positive impact on the properties of semiconductors are examined. In a first category are ranged defects used as probes for characterizing materials. Then semiconductors with high concentration of defects like low temperature GaAs and porous Si are discussed. This is followed by cases where direct use is made of the defect properties (optical, pressure…). Finally several possibilities for defect engineering of materials are reviewed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Langer, J. M. and Heinrich, H., Phys. Rev. Lett., 55, 1414 (1985).CrossRefGoogle Scholar
2. Delenie, C., Lannoo, M. and Langer, J. M., Phys. Rev. Lett., 61, 199 (1988).Google Scholar
3. Deveaud, B., Lambert, B., Plot, B., Chomette, A., Regreny, A., Bourgoin, J. C. and Stiévenard, D., J. Appl. Phys., 62, 3772 (1987).CrossRefGoogle Scholar
4. Stiévenard, D. and Feng, S. L., Materials Science Forum, Trans Tech Publications, 38- 41, Part 3, 679 (1989).Google Scholar
5. Caglio, N., Constant, E., Pesant, J. C. and Chevallier, J., J. Appl. Phys., 69, 1345, (1991).CrossRefGoogle Scholar
6. Caglio, N., Thesis, University of Lille 1, (1989).Google Scholar
7. Constant, E., Physica B, 170, 397 (1991).CrossRefGoogle Scholar
8. Sandroff, C. Y., Nottenburg, R. N., Bischoffand, J. C., Bhat, R., Appl. Phys. Lett., 51, 33 (1987).CrossRefGoogle Scholar
9. Fan, J. F., Oigawa, H. and Nannichi, Y., Jap. J. of Appl. Phys., 27, L2125 (1988).CrossRefGoogle Scholar
10. Carpenter, M. S., Melloch, M. R. and Dugan, T. E., Appl. Phys. Lett., 53, 66 (1988).CrossRefGoogle Scholar
11. Fan, J. F., Oigawa, H. and Nannichi, Y., Jap. J. of Appl. Phys., 27, L1331 (1988).CrossRefGoogle Scholar
12. Viktorovitch, P., Revue Phys. Appl., 25, 895, (1990).CrossRefGoogle Scholar
13. Viktorovitch, P., Gendry, M., Hollinger, G., Krawczyk, S. and Tardy, J., Proceedings of the 4th Int. Conf. on InP and related materials (1992).Google Scholar
14. Shikata, S., Okada, H. and Hayashi, H., J. Appl. Phys., 69, 2717 (1991) and J. Vac. Sci. Technol., B9 (5), 2479 (1991).CrossRefGoogle Scholar
15. Fujisaki, Y., Appl. Surf. Sci., 54, 95 (1992).CrossRefGoogle Scholar
16. Smith, F. W., Calawa, A. R., Chang-Lee-Chen, , Manfra, M. J. and Mahomey, L. J., IEEE Electron Device Letters, 9, 77 (1988).CrossRefGoogle Scholar
17. Smith, F. W. et al, Appl. Phys. Lett., 54, 890 (1989).CrossRefGoogle Scholar
18. Chen, Yi et al, Appl. Phys. Lett., 59, 1984 (1991).CrossRefGoogle Scholar
19. Motet, T., Nees, J., Williamson, S. and Mourou, G., Appl. Phys. Lett., 59, 1456 (1991).CrossRefGoogle Scholar
20. von Bardeleben, H. J., Manaresh, M. O., Look, D. C., Evans, K. R. and Stutz, C. E., Phys. Rev. B 45, 3372 (1992).CrossRefGoogle Scholar
21. Abstreiter, G., Brugger, H. and Wolf, T., Phys. Rev. Lett., 54, 2441 (1985).CrossRefGoogle Scholar
22. Canham, L. T., Barraclough, K. G. and Robbins, D. J., Appl. Phys. Lett., 51, 1509 (1987).CrossRefGoogle Scholar
23. Canham, L. T., Appl. Phys. Lett., 57, 1046 (1990).CrossRefGoogle Scholar
24. Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M. and Muller, F., Appl. Phys. Lett., 59, 304 (1991).CrossRefGoogle Scholar
25. Koshida, Nobuyoshi and Koyama, Hideki, Appl. Phys. Lett., 60, 347 (1992).CrossRefGoogle Scholar
26. Bellet, D., Dolino, G., Ligeon, M., Blanc, P. and Krisch, M., J. Appl. Phys., 71, 145 (1992).CrossRefGoogle Scholar
27. Xie, Y. H., Wilson, W. L., Ross, F. M., Mucha, J. A., Fitzgerald, E. A., Macaulay, J. M. and Harris, T. D., J. Appl. Phys., in press.Google Scholar
28. Tischler, M. A., Collins, R. T., Stathis, J. H. and Tsang, J. C., Appl. Phys. Lett., 60, 639 (1990).CrossRefGoogle Scholar
29. Proot, J. P., Delerue, C. and Allan, G., to be published.Google Scholar
30. For a review see: “The photorefractive effect in semiconductors” by Glass, M. and Strait, J., Topics in Applied Physics, Vol. 61, Springer Verlag (1988).Google Scholar
31. Ennen, H., Pomrenke, G., Axmann, A., Eisele, K. and Schneider, J., Appl. Phys. Lett., 46, 381 (1985).CrossRefGoogle Scholar
32. Ennen, H., Schneider, J., Pomrenke, G. and Axmann, A., Appl. Phys. Lett., 43, 943 (1983).CrossRefGoogle Scholar
33. Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y. H., Poate, J. M. and Kimerling, L. C., J. Appl. Phys., 70, (1991).Google Scholar
34. Michel, J., Kimerling, L. C., Benton, J. L, Eaglesham, D. J., Fitzgerald, E. A., Jacobson, D. C., Poate, J. M., Xie, Y. H. and Ferrante, R. F., Materials Science Forum, Ed. Davies, G., de Leo, G. G. and Stavola, M., Vol. 83–87, 653 (1992).Google Scholar
35. Robert, J. L., Mosser, V., Contreras, S., unpublished report (1992).Google Scholar
36. Stiévenard, D., Letartre, X. and Lannoo, M., to be published.Google Scholar
37. Beltram, F. and Capasso, F., Phys. Rev. B, 38, 3580 (1988).CrossRefGoogle Scholar
38. Arsenault, C. J. and Meunier, M., J. Appl. Phys., 66, 4305 (1989).CrossRefGoogle Scholar
39. Capasso, F., Cho, A. Y., Mohammed, Khalid and Foy, P. W., Appl. Phys. Lett., 46, 664 (1985).CrossRefGoogle Scholar
40. Baroni, S., Resta, R., Baldereschi, A. and Peressi, M., in Spectroscopy of Semiconductor microstructures, ed. by Fasol, G., Fasolino, A. and Lugli, P. (Plenum, New York, 1989), p. 251.CrossRefGoogle Scholar
41. Muñoz, A., Chetti, N. and Martin, R., Phys. Rev. B 41, 2976 (1990).Google Scholar
42. Peressi, M., Baroni, S., Resta, R. and Baldereschi, A., Phys. Rev. B 43, 7347 (1991).CrossRefGoogle Scholar
43. Bratina, G., Sorba, L., Antonini, A., Biasiol, G. and Franciosi, A., Phys. Rev. B 45, 4528 (1992).CrossRefGoogle Scholar