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Spatial Correlation Interpretation of Effects of As+ Implantation on the Raman Spectra of GaAs

Published online by Cambridge University Press:  25 February 2011

D.E. Aspnes ,
K.K. Tiong ,
P.M. Amirtharaj  and
F.H. Pollak
D.E. Aspnes
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974;
K.K. Tiong
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
P.M. Amirtharaj
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
F.H. Pollak
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
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Abstract

The red shift and asymmetric broadening of the LO phonon mode of ion-implanted GaAs are both described quantitatively by a spatial correlation model based on a damage-induced relaxation of the momentum selection rule previously used by Richter, Wang, and Ley to describe similar effects in microcrystalline Si. The success of the model for a qualitatively different disorder microstructure suggests it may be possible to evaluate average sizes of crystallographically perfect regions in semiconductors from the phonon lineshapes of their Raman spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 305
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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