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Spatial Generation Profiles of Active Radicals in Plasma-Enhanced CVD Of a-Si:H

Published online by Cambridge University Press:  21 February 2011

D. Mataras ,
S. Cavadias  and
D. Rapakoulias
D. Mataras
Affiliation:
Institute of Chemical Engineering and High Temperature Chemical Processes, P.O.Box 1239, GR-26110, and Department of Chemical Engineering, University of Patras, Greece.
S. Cavadias
Affiliation:
Institute of Chemical Engineering and High Temperature Chemical Processes, P.O.Box 1239, GR-26110, and Department of Chemical Engineering, University of Patras, Greece.
D. Rapakoulias
Affiliation:
Institute of Chemical Engineering and High Temperature Chemical Processes, P.O.Box 1239, GR-26110, and Department of Chemical Engineering, University of Patras, Greece.
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Abstract

Spatially resolved Laser Induced Fluorescence and Optical Emission Spectroscopy were applied in an rf silane discharge, for the simultaneous detection of both ground and excited states of SiH radicals. Axial intensity profiles of these radicals were recorded under various conditions. The experimental observations indicate that the two radicals have different generation paths. LIF profiles are considered to represent the generation profile of all the ground state radicals and they were used as such in kinetic calculations.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 55
Copyright
Copyright © Materials Research Society 1990

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References

1. Schmitt, P. M., Gressier, P., Krishnan, M., De Rosny, G. and Perrin, J., Chem. Phys. 84, 281, (1984); G. Inoue and M. Suzuki, Chem.Phys.Lett. 105, 641 (1984); R.M Roth, K.G Spears and G. Wong, Appl. Phys. Lett. 45, 28, (1984)Google Scholar
2. Itabashi, N., Kato, K., Nishiwaki, N., Goto, T., Yamada, C. and Hirota, E., Jap. J. Appl. Phys. 27, L1565 (1988); N. Itabashi, K. Kato, N. Nishiwaki, T. Goto, C. Yamada and E. Hirota, Jap. J. Appl. Phys. 28, L325 (1989);Google Scholar
3. Mataras, D., Cavadias, S., D. Rapakoulias J. Appl. Phys. 66, 119 (1989)Google Scholar
4. Gottscho, R. A., Scheller, G. R., Stoneback, D., and Intrator, T., J. Appl. Phys. 66, 492 (1989)Google Scholar
5. Mataras, D., Cavadias, S., D. Rapakoulias submitted for publication to J. Appl. Phys.Google Scholar
6. Matsumi, Y., Hayashi, T., Yoshikawa, H., and Komiya, S., J. Vac. Sci. Technol. A4, 1786 (1986); A.Matsuda and K.Tanaka, Thin Solid Films 92, 171 (1982)Google Scholar
7. Gallagher, A., J. Appl. Phys. 63, 2406 (1988)Google Scholar
8. Perrin, J., Aarts, J.F.M., Chem.Phys. 80, 351 (1983)Google Scholar
9. Roth, R.M., Mat. Res. Soc. Symp. Proc. 98, 209 (1987)Google Scholar
10. van Roosmalen, A.J., van den Hoek, W. G. M., and Kalter, H., J. Appl. Phys. 27, 653 (1985)Google Scholar
11. Perrin, J., Cabarrocas, P. Roca i, Allain, B., and Friedt, J. M., Jap. J. Appl. Phys. 27, L2041 (1988)Google Scholar
12. Kuznetsov, V. I., van Oorst, R.C., and Metselaar, J. W., J. AppI. Phys. 65, 575 (1989)Google Scholar