Hostname: page-component-7dd5485656-2pp2p Total loading time: 0 Render date: 2025-11-02T21:19:27.497Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability of Sputter Deposited Al-Cu Bilayers on SiO2.

Published online by Cambridge University Press:  25 February 2011

R. Nandan ,
S. P. Murarka ,
A. Pant ,
C. Shepard  and
W. A. Lanford
R. Nandan
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York.
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York.
A. Pant
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York.
C. Shepard
Affiliation:
State University of New York at Albany, Physics Department, Albany, New York.
W. A. Lanford
Affiliation:
State University of New York at Albany, Physics Department, Albany, New York.
Get access

Abstract

An investigation of the stability and electrical characteristics of Aluminum-Copper bilayer films on SiO2 has been carried out. In this investigation, a thin layer of sputtered aluminum is used as a diffusion barrier/adhesion promoter between the copper and SiO2. The electrical performance of these structures when subjected to thermal cycles and applied biases is determined. The interactions and diffusion of copper through aluminum into SiO2 was investigated using both blanket films and MOS capacitors. Results are compared with those obtained from structures of Al and Cu metallization on SiO2. Samples were annealed at various temperatures in the range of 200°C to 500°C. Analysis using four-point probe resistivity measurements, X-ray diffraction, and Rutherford Back Scattering were carried out. MOS capacitors are used to establish performance under applied bias. Capacitance-Voltage characteristics of formed alloys are discussed. These results will be presented and discussed in view of the applicability of aluminum as the adhesion promoter for copper interconnections on SiO2.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] McBrayer, J. D., Swanson, R. M. and Sigmon, T. W., J. Electrochem. Soc, 133, 1242–1246 (1986).Google Scholar
[2] Yang, E. S., Microelectronic Devices, (McGraw-Hill, New York, 1988), pp. 229–244.Google Scholar
[3] Schroder, K. (ed.), CRC Handbook of Electrical Resistivities of Binary Metallic Alloys, (CRC Press Inc., Boca Raton, FL, 1983), pp. 78–79.Google Scholar
[4] Selected Powder Diffraction Data for Metals and Allovs, (JCPDS, Swathmore, PA, 1978).Google Scholar
[5] Pearson, W. B., Lattice Spacing and Structure of Metals and Allovs, (Pergamon Press, New York, 1958).Google Scholar
[6] Ravi, K. V., Imperfections in Semiconductor Silicon, (John Wiley and Sons, New York, 1981), pp. 286–288.Google Scholar
[7] Zemel, Jay N. (ed.), Non-Destructive Evaluation of Semiconductor Materials and Devices, (Plenum Press, New York, 1979), pp. 169–187.CrossRefGoogle Scholar
[8] Shacham-Diamand, Y., Dedhia, A., Hoffstetter, D. and Oldham, W. G., Proceedings of the VMIC, 1991, 109–115.Google Scholar
[9] Cullity, B. D., Elements of X-Rav Diffraction, 2nd ed., (Addison-Wesley Publishing Co. Inc., Reading, MA, 1978).Google Scholar