Hostname: page-component-cb9f654ff-p5m67 Total loading time: 0 Render date: 2025-09-02T01:46:53.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Stacking Fault Energy Calculations in 6H- and 15R-SiC

Published online by Cambridge University Press:  21 February 2011

F. R. Chien ,
S. R. Nutt  and
W. S. Yoo
F. R. Chien
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
S. R. Nutt
Affiliation:
Department of Materials Science, University of Southern California, Los Angeles, CA 90089
W. S. Yoo
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810
Get access

Abstract

As-grown SiC single crystals and as-deposited SiC epilayers often exhibit stacking faults. The most probable fault configurations that occur in 6H- or 15R-SiC crystals are deduced from calculations of the stacking fault energies using a modified Ising model with the Ising parameters taken from earlier ab initio calculations. In this study, experimental TEM observations reveal stacking fault configurations in 6H- and 15R-SiC, and the observed configurations are compared with calculated stacking fault energies.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Verma, A.R. and Krishna, P., in Polymorphism and Polytypism in Crystals, (John Wiley, New York, 1966)Google Scholar
2. Ramsdell, L.S., Am. Mineral. 32, 64 (1947)Google Scholar
3. Zhdanov, G.S., CR. (Doki.) Acad. Sci. USSR, 48, 39 (1945)Google Scholar
4. Trigunayat, G.C. and Chadha, G.K., Phys. Stat. Sol. 4, 9 (1971)Google Scholar
5. Pandey, D. and Krishna, P., Prog. Crystal Growth Charact, 7, 213 (1983)Google Scholar
6. Cheng, C., Needs, R.J., Heine, V. and Churcher, N., Europhys. Lett., 3, 475 (1987)Google Scholar
7. Cheng, C., Needs, R. J. and Heine, V., J. Phys. C, 21, 1049 (1988)Google Scholar
8. Yeomans, J., in Solid State Physics, Vol. 41, edited by Ehrenreich, H. and Turnbull, D., Academic Press (1988)Google Scholar
9. Price, G.D. and Yeomans, Y., Acta Cryst. B40, 448 (1984)Google Scholar
10. Cheng, C., Heine, V. and Jones, I.L., J. Phys.: Condens. Matter, 2, 5097 (1990)Google Scholar
11. Pandey, D. and Krishna, P., Phil. Mag. 31, 1133 (1975)Google Scholar
12. Wright, A.F., Daw, M.S. and Fong, C.Y., Phil. Mag. A. 66, 387 (1992)Google Scholar
13. Chien, F.R., Nutt, S.R., Yoo, W.S., Kimoto, T. and Matsunami, H., J. Mater. Res. 9, 940 (1994)Google Scholar