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Strain and Damage in Silicon Due to a Deep Oxygen Implantation

Published online by Cambridge University Press:  28 February 2011

Thad Vreeland
Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA 91125
T.S. Jayadev
Lockheed Research Laboratory, Palo Alto, CA 94304
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Silicon wafers, implanted with oxygen at 550°C to form a buried oxide layer have been examined with TEM and x-ray diffraction. Implantation damage increased with depth up to ~1500 Å where some amorphous regions were seen. The amorphous region extended for -4500 Å to a damaged crystalline region ~1000 Å thick. Double crystal x-ray rocking curves of the as-implanted and of annealed crystals were obtained and analyzed. The strain normal to the (100) surface in the as-implanted crystalline Si did not exceed +0.05%. After an argon anneal, the strain disappeared, leaving a crystal with a lower density of extended defects and no measureable misorientation of surface or deep layers. In marked contrast, an anneal in a hydrogen atmosphere exhibited no normal strain but contained regions above the oxide layer which differed in orientation from the substrate. The misorientation ranged up to ~0.1 degree.

Research Article
Copyright © Materials Research Society 1986

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