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Structural Defects in Ion Implanted 4H-SiC Epilayers

Published online by Cambridge University Press:  21 March 2011

P. O. Å. Persson ,
W. Skorupa ,
D. Panknin ,
A. Kuznetsov ,
A. Hallén  and
L. Hultman
P. O. Å. Persson
Affiliation:
Thin Film Physics Division, Department of Physics, Linköping University, S-581 83 Linköping, Sweden
W. Skorupa
Affiliation:
FWIM Forschungszentrum Rossendorf, D-01474 Schoenfeld-Weissig, Germany
D. Panknin
Affiliation:
FWIM Forschungszentrum Rossendorf, D-01474 Schoenfeld-Weissig, Germany
A. Kuznetsov
Affiliation:
Royal Institute of Technology, Solid State Electronics, P.O. Box E229, S-164 40 Kista-Stockholm, Sweden
A. Hallén
Affiliation:
FWIM Forschungszentrum Rossendorf, D-01474 Schoenfeld-Weissig, Germany
L. Hultman
Affiliation:
Thin Film Physics Division, Department of Physics, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Transmission electron microscopy (TEM) was used to investigate Al, Ar, C and Si ionimplanted 4H-SiC epilayers. After the implantation the samples were thermally annealed for 30 minutes at 1700°C. During the annealing process dislocation loops are formed and the generation of such dislocation loops upon annealing, is investigated with respect to dopant electrical activation, peak ion concentration and calculated interstitial/vacancy concentrations. It is concluded that the dislocation loops are generated as the result of a combination of residual damage and excess interstitials generated in a “plus one” (+1) process.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H6.2
Copyright
Copyright © Materials Research Society 2001

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References

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