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Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

Published online by Cambridge University Press:  01 February 2011

R. Job ,
Y. Ma  and
A. G. Ulyashin
R. Job
Affiliation:
University of Hagen (LGBE), P.O. Box 940, D-58084 Hagen, Germany
Y. Ma
Affiliation:
University of Hagen (LGBE), P.O. Box 940, D-58084 Hagen, Germany
A. G. Ulyashin
Affiliation:
University of Hagen (LGBE), P.O. Box 940, D-58084 Hagen, Germany IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Hydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L3.34
Copyright
Copyright © Materials Research Society 2004

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References

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