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A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

Published online by Cambridge University Press:  17 March 2011

M.P. Singh ,
S. Mukhopadhayay ,
Anjana Devi  and
S.A. Shivashankar
M.P. Singh
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India
S. Mukhopadhayay
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India
S.A. Shivashankar
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India
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Abstract

We have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3}as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P6.47
Copyright
Copyright © Materials Research Society 2001

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