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Study on Cubic GaN Growth on (001) Rutile TiO2 Substrates by ECR-MBE

Published online by Cambridge University Press:  11 February 2011

T. Araki ,
H. Mamiya ,
K. Kitamura  and
Y. Nanishi
T. Araki
Affiliation:
Dept. of Photonics, Ritsumeikan University, 1–1–1 Noji-higashi, Kusatsu, Shiga 525–8577, Japan
H. Mamiya
Affiliation:
Dept. of Photonics, Ritsumeikan University, 1–1–1 Noji-higashi, Kusatsu, Shiga 525–8577, Japan
K. Kitamura
Affiliation:
Dept. of Photonics, Ritsumeikan University, 1–1–1 Noji-higashi, Kusatsu, Shiga 525–8577, Japan
Y. Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan University, 1–1–1 Noji-higashi, Kusatsu, Shiga 525–8577, Japan
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Abstract

GaN layers were grown on a (001) rutile TiO2 substrate by electron cyclotron resonance plasma-excited molecular beam epitaxy. For the first time, c-GaN with a preferential growth orientation was obtained. Based on the results from electron diffraction and X-ray diffraction analysis, we found that c-GaN with the growth direction of [110] was grown on the TiO2 substrate. The formation of c-GaN was also confirmed by cathodoluminescence, in which a luminescence peak was observed at 3.24eV.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.27
Copyright
Copyright © Materials Research Society 2003

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References

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