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Sub-Bandgap Optical Absorption in Amorphous Silicon using Photo-Pyroelectric Spectroscopy

Published online by Cambridge University Press:  21 February 2011

J. Fan  and
J. Kakalios
J. Fan
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

Measurements of the optical absorption spectrum of doped and undoped hydrogenated amorphous silicon (a-Si:H) for photon energies ranging from 0.8 to 2.5 eV are obtained using photo-pyroelectric spectroscopy (PPES). This technique, based upon the pyroelectric effect, has a simpler experimental set-up than photo-thermal deflection spectroscopy, and presently has a sensitivity of ad > 10-3, where d is the sample thickness. In addition, using PPES we have measured the non-radiative quantum efficiency in a-Si:H, and find that it has a strong wavelength dependence for sub-bandgap illumination.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 545
Copyright
Copyright © Materials Research Society 1991

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References

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