Hostname: page-component-5db6c4db9b-s6gjx Total loading time: 0 Render date: 2023-03-25T21:26:40.135Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Synthesis of embedded Si nano-particles using swift heavy ions and its optical properties

Published online by Cambridge University Press:  20 July 2012

P. K. Sahoo
School of Physical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar-751005, India
D. P. Mahapatra
Institute of Physics, Sachivalaya Marg, Bhubaneswar – 751 005, India
D. Kanjilal
Inter-University Accelerator Centre, New Delhi 110 067, India
Get access


Embedded Si nano-particles of average size around 5nm were synthesized in an amorphous Si matrix by two stage ion implantation processes. It has been observed that amorphous Si (a-Si) layers were recrystallized using 50 MeV Au ions with enhanced regrowth rate with activation energy in the range of 0.29 eV. During the crystallization process Si nanocrystals were formed in the a-Si layers due to sudden quenching of the molten tracks created by MeV Au ions. The recrystalizations were confirmed by Rutherford backscattering spectrometry-Channeling (RBSC) technique. The structural modification and nanocluster creation that emerged during recrystallization process was observed in high-resolution transmission electron microscopy and photoluminescence (PL) spectroscopy. The PL emission was observed over a broad band of 2.8 – 3.4 eV and centered at 3.25 eV. The Si nano-crystal formation can be explain by a mechanism combining the melting within the ion tracks by thermal spike process and the subsequent recrystallization nucleated from the crystalline sides at the interface.

Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)



[1] Cullis, A G, Canham, L T and Calcott, P D J 1997 J. Appl. Phys. 82, 909 10.1063/1.366536CrossRefGoogle Scholar
[2] Zhao, X, Schoenfeld, O, Kusano, J, Aoyagi, Y. and Sugano, T. Japan. J. Appl. Phys. 33, L649 (1994)10.1143/JJAP.33.L649CrossRefGoogle Scholar
[3] Shimizu-Iwayama, T, Nakao, S and Saitoh, K, Appl. Phys. Lett. 65, 1814 (1994)10.1063/1.112852CrossRefGoogle Scholar
[4] Mutti, P, Ghislotti, G, Bertoni, S, Bonoldi, L, Gerofolini, G F, Meda, L, Grilli, E and Guzzi, M. Appl. Phys. Lett. 66, 851 (1995)10.1063/1.113408CrossRefGoogle Scholar
[5] Kawaguchi, T and Miyamiza, S Japan. J. Appl. Phys. 32, L215 (1993).10.1143/JJAP.32.L215CrossRefGoogle Scholar
[6] Cullis, A G and Canham, L T, Nature 353, 335 (1991).10.1038/353335a0CrossRefGoogle Scholar
[7] Kanemitsu, Y, Phys. Rev. B 49 16845 (1994).10.1103/PhysRevB.49.16845CrossRefGoogle Scholar
[8] Shimizu-Iwayama, T, Kurumado, N, Hole, D E and Townsend, P D, J. Appl. Phys. 83, 6018 (1998).10.1063/1.367469CrossRefGoogle Scholar
[9] Andersen, O K and Veje, E, Phys. Rev. B 53, 15643 (1996).10.1103/PhysRevB.53.15643CrossRefGoogle Scholar
[10] Elliman, R G, Williams, J S, Brown, W L, Leiberich, A, Maher, D M and Knoell, R V, Nucl Instrum. Methods B 19/20, 435 (1987).10.1016/S0168-583X(87)80086-1CrossRefGoogle Scholar
[11] Chami, A C, Ligeon, E, Danielou, R, Fontenille, J and Eymery, R, J. Appl. Phys. 61, 161 (1987).10.1063/1.338849CrossRefGoogle Scholar
[12] Kinomura, A, Willams, J S and Fuji, K, Phys. Rev. B 59, 15214 (1999)10.1103/PhysRevB.59.15214CrossRefGoogle Scholar
[13] Wang, Z L, Itoh, N, Matsunami, N and Zhao, Q T 1995 Nucl. Instrum. Methods B 100 493 10.1016/0168-583X(95)00369-XCrossRefGoogle Scholar
[14] Williams, J S, Elliman, R G, Brown, W L and Seidel, T E 1985 Phys. Rev. Lett. 55, 1482 (1985).10.1103/PhysRevLett.55.1482CrossRefGoogle Scholar
[15] Toulemonde, M., Assmann, W., Trautmann, C., Grüner, F., Phys. Rev. Lett. 88, 057602 (2002).10.1103/PhysRevLett.88.057602CrossRefGoogle Scholar
[16] Sahoo, P K, Mohanty, T, Kanjilal, D, Pradhan, A and Kulkarni, V N, Nucl. Instrum. Methods B 257, 244 (2007); T. Som. Nucl. Instrum. Methods Phys. Res. B 240, 239(2005).10.1016/j.nimb.2007.01.008CrossRefGoogle Scholar
[17] Google Scholar
[18] Roccaforte, F., Bolse, W., and Lieb, K. P., Appl. Phys. Lett. 73, 1349 (1998).10.1063/1.122159CrossRefGoogle Scholar
[19] Mieskes, H.D., Assmann, W., Grüner, F., Kucal, H., Wang, Z.G., Toulemonde, M., Phys. Rev. B 67, 155414 (2003).10.1103/PhysRevB.67.155414CrossRefGoogle Scholar
[20] Williams, J. S., Elliman, R.G., Brown, W.L., and Seidel, T. E., Phys. Rev. Lett. 55, 1482 (1985).10.1103/PhysRevLett.55.1482CrossRefGoogle Scholar
[21] Nakata, J., Phys. Rev. B 43, 14643 (1991); J. Appl. Phys. 79, 682 (1996).10.1103/PhysRevB.43.14643CrossRefGoogle Scholar
[22] Kim, T W, Park, N, Kim, K H and Sung, G Y, Appl. Phys. Lett. 88 123102 (2006).10.1063/1.2187434CrossRefGoogle Scholar
[23] Heera, V., Henkel, T., Kögler, R., and Skorupa, W., Phys. Rev. B 52, 15776 (1995).10.1103/PhysRevB.52.15776CrossRefGoogle Scholar
[24] Benyagoub, A., Audren, A., Appl. Phys. Lett., 106, 038516 (2009).Google Scholar
[25] Som, T., Satpati, B., Sinha, O.P., and Kanjilal, D., J. Appl. Phys. 98, 013532 (2005); D. Kanjilal, Nucl. Instr. Meth. Phys. Res. B 245, 255(2006).10.1063/1.1949275CrossRefGoogle Scholar
[26] Sahu, G., Lenka, H. P., Mahapatra, D. P., Rout, B. and McDaniel, F. D., J. Phys.: Condens. Matter 22, 072203 (2010); B. Joseph, P. K. Kuiri, A. Pradhan, Nanotechnology 18, 495702(2007).Google Scholar