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A Tem Study Of The Microstructural Evolution Of Mbe-Grown Gan

Published online by Cambridge University Press:  10 February 2011

David M. Tricker
Affiliation:
Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK, dmt1000@cus.cam.ac.uk
Paul D. Brown
Affiliation:
Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK, dmt1000@cus.cam.ac.uk
Graeme Martin
Affiliation:
Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK, dmt1000@cus.cam.ac.uk
J. Lu
Affiliation:
Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK
D. I. Westwood
Affiliation:
Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK
P. Hill
Affiliation:
Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK
L. Haworth
Affiliation:
Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK
J. E. Macdonald
Affiliation:
Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK
T. S. Cheng
Affiliation:
Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
C. T. Foxon
Affiliation:
Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
Colin J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK, dmt1000@cus.cam.ac.uk
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Abstract

The evolution of the microstructure of GaN grown by molecular beam epitaxy on {001} and {111} oriented GaAs substrates has been followed using transmission electron microscopy and reflection high energy electron diffraction. A thin layer of GaN has been shown to form during the nitridation of the GaAs surface prior to growth. Growth of GaN then proceeds by an island mechanism. Faulting on the four {111} planes of the cubic zinc-blende phase which grows on the {001 } surface occurs at an early stage as a consequence of misfit strain. The distribution of the {111} microtwins is initially isotropic, but growth of one pair of {111} twins proceeds much faster than that of the other pair, leading to a final microstructure which has an anisotropic distribution of microtwins. Doping of GaN with Si hinders the growth of the zinc-blende phase, leading to a textured, columnar (0001) wurtzite microstructure. Evidence is presented to show that addition of Mg as a dopant may reduce the stacking fault energy of wurtzite GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Cheng, T. S., Jenkins, L. C., Hooper, S. E., Foxon, C. T., Orton, J. W. and Lacklison, D., Appl. Phys. Lett. 66, 1509 (1995).Google Scholar
2. Cheng, T. S., Foxon, C. T., Jeffs, N. J., Dewsnip, D. J., Flannery, L., Orton, J. W., Novikov, S. V., Ber, B. Ya, Kudriavtsev, Yu A., MRS Internet J. Nitride Semicond. Res. 2, article 13 (1997).Google Scholar
3. Brown, P. D., Tricker, D. M., Xin, Y., Cheng, T. S., Foxon, C. T., Evans, D., Galloway, S., Brock, J. and Humphreys, C. J., this volume.Google Scholar
4. Tricker, D. M., Brown, P. D., Cheng, T. S., Foxon, C. T. and Humphreys, C. J., Appl. Surface Sci., in press.Google Scholar

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